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By PRIGOGINE, RICE

The Advances in Chemical Physics sequence presents the chemical physics and actual chemistry fields with a discussion board for serious, authoritative reviews of advances in each quarter of the self-discipline. packed with state of the art examine pronounced in a cohesive demeanour no longer chanced on somewhere else within the literature, each one quantity of the Advances in Chemical Physics sequence serves because the ideal complement to any complex graduate category dedicated to the research of chemical physics.

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DUKE values of the parameters in that model that are associated with a given set of observations. Five types of parameters occur in such a model. We already have defined the beam parameters (E, E‘, 9, O’, 4, 4‘) in the preceding subsection. , entropy) associated with the surface properties of the target. On the “atomic” scale, there are structural parameters describing the chemical identity, geometrical positions, and lattice vibrations of the ion-cores at the sample surface. Given the atomic structure, it is electronic parameters which describe the interaction of the incident electron with the constituents of the target.

111. LOW-ENERGY ELECTRON DIFFRACTION: CONCEPTS AND DEFINITIONS A. Intensity Analysis I . Data Displays We have seen in previous sections that an analysis of observed lowenergy electron diffraction (LEED) intensities is both necessary and sufficient to determine many features of the geometrical, vibrational, and electronic structure of a presumably planar surface of a single-crystal solid. In this subsection we describe the parameters on which the intensities depend and the common methods of displaying these intensities in forms suitable for analysis.

Were this the case, we would be fortunate to know the crystal structure of Al, Si, Ge, and possibly GaAs and Cu. The determination of the structure of more complicated materials would be almost hopeless. The implications of the corresponding requirement for surface structures are obvious. That no such requirement exists is fortunate for surface crystallography, but is indicative of the difficulties inherent in assessing the surface sensitivity of techniques designed to measure electronic structure.

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